You are viewing an old version of this page. View the current version.
Compare with Current
View Page History
« Previous
Version 9
Next »
These are radiation monitoring devices, so the Device Type is RADM:.
The hard x-ray side uses DOSFET controllers for undulator dosimeters, so the area will be UNDH:. The soft x-ray side will use the Keithley RadFET system, so the area for those will be UNDS:. Some sensors and one DOSFET box will be in the dump area.
PVs that apply to one RadFET sensor module
In this table, the "PV Name" column defines the user/programming interface with DEV defined by sensor location, e.g. DEV=RADM:GUNB:621: for a sensor at location 621 in GUNB. Each sensor board has two radiation dose sensors and one temperature sensor on it, so the radiation dose readings have an instance 1: and an instance 2:.
PV Name | Type | Description |
---|
$(DEV):$(INST):RAW | ai | Raw voltage readback. |
$(DEV):$(INST):ZERO_VOLTS | ai | Raw voltage corresponding to 0 accumulated dose. |
$(DEV):$(INST):DELTA_VOLTS | ai | Raw voltage difference, from 0 to now. |
$(DEV):$(INST):DOSE | calc | Accumulated dose. Calculated from DELTA_VOLTS, with an equation in the CALC field configured by radiation physicists |
$(DEV):$(INST):RAW_STATUS | mbbi | Sensor status. ("Ok", "Over Linear Range", "Error") |
$(DEV):TEMP | ai | Temperature of the sensor board, C. |
$(DEV):$(INST):SET_ZERO_VOLTS | bo | Expert screen, define latest voltage readback as 0 dose |
$(DEV):$(INST):ZERO_TOD | stringin | Date/time string when dose was zeroed, i.e. latest voltage readback defined as ZERO_VOLTS |
PVs that apply to the whole DOSFET chassis
In this table, DEV is a chassis name. One DOSFET chassis has four of the sensor modules defined above.
PV Name | Type | Description |
---|
$(DEV):VERSION | stringin | DOSFET controller version |
$(DEV):ID | stringin | DOSFET serial number |
$(DEV):GET_DELAY | ai | Readback of pause between applying readback current and reading voltage |
$(DEV):SET_DELAY | ao | Set pause time between applying readback current and reading voltage |
$(DEV):GET_BIAS | ai | Readback bias voltage used between dose readings |
$(DEV):SET_BIAS | ao | Set bias voltage used between dose readings |
$(DEV):SAVE_SETTINGS | bo | Save delay and bias settings in the chassis non-volatile storage. |
$(DEV):SET_PERIOD | ao | Dose readback sampling interval setting |
$(DEV):BOARD_TEMP | ai | DOSFET chassis main board temperature |
$(DEV):POLL_ENABLE | bo | Enable/disable dose readback polling. |
$(DEV):POLL_DELAY | ao | Dose readback sampling interval readback |
$(DEV):GATE_POLLING | ai | Counter for seconds since the last dose readback cycle |
DOSFET locations and sensor to chassis mapping
DOSFET controller location | Network host name | MAC address | Controller connection | Sensor undulator # | Sensor apx. z-location | PV "Location" field |
---|
HXU14 | radm-undh-rm01 | 00:80:A3:9B:A9:34
| A | HXU13 | 11702 | 1377 |
B | HXU14 | 11716 | 1477 |
C | HXU15 | 11728 | 1577 |
D | HXU16 | 11742 | 1677 |
HXU18 | radm-undh-rm02 | 00:80:A3:A1:81:05
| A | HXU17 | 11755 | 1777 |
B | HXU18 | 11768 | 1877 |
C | HXU19 | 11781 | 1977 |
D | HXU20 | 11795 | 2077 |
HXU22 | radm-undh-rm03 | 00:80:A3:9B:A9:1F | A | Self Seeding | 11808 | 2177 |
B | HXU22 | 11820 | 2277 |
C | HXU23 | 11833 | 2377 |
D | HXU24 | 11846 | 2477 |
HXU26 | radm-undh-rm04 | 00:80:A3:A1:81:11 | A | HXU25 | 11860 | 2577 |
B | HXU26 | 11873 | 2677 |
C | HXU27 | 11887 | 2777 |
D | Self Seeding | 11900 | 2877 |
HXU30 | radm-undh-rm05 | 00:80:A3:A1:81:1B
| A | HXU29 | 11913 | 2977 |
B | HXU30 | 11932 | 3077 |
C | HXU31 | 11932 | 3177 |
D | HXU32 | 11932 | 3277 |
HXU34 | radm-undh-rm06 | 00:80:A3:A1:81:OE | A | HXU33 | 11932 | 3377 |
B | HXU34 | 11932 | 3477 |
C | HXU35 | 11952 | 3577 |
D | HXU36 | 11965 | 3677 |
HXU38 | radm-undh-rm07 | 00:80:A3:A1:81:17
| A | HXU37 | 11978 | 3777 |
B | HXU38 | 11991 | 3877 |
C | HXU39 | 12005 | 3977 |
D | HXU40 | 12018 | 4077 |
HXU42 | radm-undh-rm08 | 00:80:A3:9B:A9:10 | A | HXU41 | 12031 | 4177 |
B | HXU42 | 12044 | 4277 |
C | HXU43 | 12058 | 4377 |
D | HXU44 | 12071 | 4477 |
HXU46 | radm-undh-rm09 | 00:80:A3:9B:A9:26 | A | HXU45 | 12084 | 4577 |
B | HXU46 | 12097 | 4677 |
Internal name mapping for maintenance reference, NOT PART OF THE NAMING CONVENTION
In this table, the "PV Name" column defines the user/programming interface with DEV defined by sensor location, e.g. DEV=RADM:GUNB:621: for a sensor at location 621 in GUNB, and "Wrapped internal name" is the names used internally, for which "PV Name" is a wrapper (not exposed on screens) which reflect the chassis channel labeling and manufacturer's documentation, e.g. P=RADM:GUNB:201: and SENSOR=B for channel B of the chassis at location 201 in GUNB.
PV Name | Wrapped internal name | Description |
---|
$(DEV):1:RAW | $(P):$(SENSOR)1:RAW | Raw voltage readback. Channel 1 of RadFET pair. |
$(DEV):1:ZERO_VOLTS | $(P):$(SENSOR)1:ZERO_VOLTS | Raw voltage at 0 accumulated dose. Channel 1 of RadFET pair. |
$(DEV):1:DELTA_VOLTS | $(P):$(SENSOR)1:DELTA_VOLTS | Raw voltage difference, from 0 to now. Channel 1 of RadFET pair. |
$(DEV):1:DOSE | $(P):$(SENSOR)1:DOSE | Accumulated dose. Channel 1 of RadFET pair. Calculated from DELTA_VOLTS, with an equation configured by radiation physicists |
$(DEV):1:RAW_STATUS | $(P):$(SENSOR)1:RAW_STATUS | Sensor status. Channel 1 of RadFET pair. |
$(DEV):2:RAW | $(P):$(SENSOR)2:RAW | Raw voltage readback. Channel 2 of RadFET pair. |
$(DEV):2:ZERO_VOLTS | $(P):$(SENSOR)2:ZERO_VOLTS | Raw voltage at 0 accumulated dose. Channel 2 of RadFET pair. |
$(DEV):2:DELTA_VOLTS | $(P):$(SENSOR)2:DELTA_VOLTS | Raw voltage difference, from 0 to now. Channel 2 of RadFET pair. |
$(DEV):2:DOSE | $(P):$(SENSOR)2:DOSE | Accumulated dose. Channel 2 of RadFET pair. |
$(DEV):2:RAW_STATUS | $(P):$(SENSOR)2:RAW_STATUS | Sensor status. Channel 2 of RadFET pair. |
$(DEV):TEMP | $(P):[A,B,C,D]TEMP | Temperature of the sensor board. |