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These are radiation monitoring devices, so the Device Type is RADM:.

The hard x-ray side uses DOSFET controllers for undulator dosimeters, so the area will be UNDH:. The soft x-ray side will use the Keithley RadFET system, so the area for those will be UNDS:. Some sensors and one DOSFET box will be in the dump area.

In this table, the "PV Name" column defines the user/programming interface with DEV defined by sensor location, e.g. DEV=RADM:GUNB:621: for a sensor at location 621 in GUNB. Each sensor board has two sensors on it, so the readings have an instance 1: and an instance 2:.

PV NameType

Description

$(DEV):$(INST):RAW

ai

Raw voltage readback.

$(DEV):$(INST):ZERO_VOLTSaiRaw voltage at 0 accumulated dose.
$(DEV):$(INST):DELTA_VOLTSaiRaw voltage difference, from 0 to now.
$(DEV):$(INST):DOSEcalc

Accumulated dose.

Calculated from DELTA_VOLTS, with an equation in the CALC field configured by radiation physicists

$(DEV):$(INST):RAW_STATUSmbbiSensor status. ("Ok", "Over Linear Range", "Error")
$(DEV):TEMPai Temperature of the sensor board, C.
$(DEV):$(INST):SET_ZERO_VOLTSboExpert screen, define latest voltage readback as 0 dose
$(DEV):$(INST):ZERO_TODstringinDate/time string when dose was zeroed

PVs that apply to the whole DOSFET chassis

In this table, DEV is a chassis name

PV NameType

Description

$(DEV):VERSIONstringinDOSFET controller version
$(DEV):IDstringinDOSFET serial number
$(DEV):GET_DELAYai

Readback of pause between applying current and reading voltage

$(DEV):SET_DELAYaoSet pause time between applying current and reading voltage
$(DEV):GET_BIASaiReadback bias voltage used between dose readings
$(DEV):SET_BIASaoSet bias voltage used between dose readings
$(DEV):SAVE_SETTINGSboSave delay and bias settings in the chassis non-volatile storage.
$(DEV):SET_PERIODaoDose readback sampling interval setting
$(DEV):BOARD_TEMPaiDOSFET chassis main board temperature
$(DEV):POLL_ENABLEboEnable/disable dose readback polling.
$(DEV):POLL_DELAYaoDose readback sampling interval readback
$(DEV):GATE_POLLINGaiCounter for seconds since the last dose readback cycle

 

DOSFET locations and sensor to chassis mapping

DOSFET controller locationNetwork host nameSensor undulator #Location fieldSensor z-locationController connection
      

 

Internal name mapping for maintenance reference, NOT PART OF THE NAMING CONVENTION

In this table, the "PV Name" column defines the user/programming interface with DEV defined by sensor location, e.g. DEV=RADM:GUNB:621: for a sensor at location 621 in GUNB, and "Wrapped internal name" is the names used internally, for which "PV Name" is a wrapper, but not exposed on screens which reflect the chassis channel labeling and manufacturer's documentation, e.g. P=RADM:GUNB:201: and SENSOR=B for channel B of the chassis at location 201 in GUNB. 

PV NameWrapped internal name

Description

$(DEV):1:RAW$(P):$(SENSOR)1:RAW

Raw voltage readback. Channel 1 of RadFET pair.

$(DEV):1:ZERO_VOLTS$(P):$(SENSOR)1:ZERO_VOLTSRaw voltage at 0 accumulated dose. Channel 1 of RadFET pair.
$(DEV):1:DELTA_VOLTS$(P):$(SENSOR)1:DELTA_VOLTSRaw voltage difference, from 0 to now. Channel 1 of RadFET pair.
$(DEV):1:DOSE$(P):$(SENSOR)1:DOSE

Accumulated dose. Channel 1 of RadFET pair.

Calculated from DELTA_VOLTS, with an equation configured by radiation physicists

$(DEV):1:RAW_STATUS$(P):$(SENSOR)1:RAW_STATUSSensor status. Channel 1 of RadFET pair.
$(DEV):2:RAW$(P):$(SENSOR)2:RAWRaw voltage readback. Channel 2 of RadFET pair.
$(DEV):2:ZERO_VOLTS$(P):$(SENSOR)2:ZERO_VOLTSRaw voltage at 0 accumulated dose. Channel 2 of RadFET pair.
$(DEV):2:DELTA_VOLTS$(P):$(SENSOR)2:DELTA_VOLTSRaw voltage difference, from 0 to now. Channel 2 of RadFET pair.
$(DEV):2:DOSE$(P):$(SENSOR)2:DOSEAccumulated dose. Channel 2 of RadFET pair.
$(DEV):2:RAW_STATUS$(P):$(SENSOR)2:RAW_STATUSSensor status. Channel 2 of RadFET pair.
$(DEV):TEMP$(P):[A,B,C,D]TEMP Temperature of the sensor board.

 

 

 

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