These are radiation monitoring devices, so the Device Type is RADM:.
The soft x-ray side uses DOSFET controllers for undulator dosimeters, so the area will be UNDS:. The hard x-ray side will use the Keithley RadFET system, so the area for those will be UNDH:. Some sensors and one DOSFET box will be in the dump area.
In this table, the PV Name column defines the user/programming interface with USER_P defined by sensor location, e.g. USER_P=RADM:GUNB:621: for a sensor at location 621 in GUNB, and Aliased internal name is the names used internally but not exposed on screens which reflect the chassis channel labeling and manufacturer's documentation, e.g. P=RADM:GUNB:201: and SENSOR=B for channel B of the chassis at location 201 in GUNB. Each sensor board has two sensors on it, so the readings have an instance 1: and an instance 2:.
| PV Name | Aliased internal name | Description |
|---|---|---|
| $(USER_P)1:RAW | $(P):$(SENSOR)1:RAW | Raw voltage readback. Channel 1 of RadFET pair. |
| $(USER_P)1:ZERO_VOLTS | $(P):$(SENSOR)1:ZERO_VOLTS | Raw voltage at 0 accumulated dose. Channel 1 of RadFET pair. |
| $(USER_P)1:DELTA_VOLTS | $(P):$(SENSOR)1:DELTA_VOLTS | Raw voltage difference, from 0 to now. Channel 1 of RadFET pair. |
| $(USER_P)1:DOSE | $(P):$(SENSOR)1:DOSE | Accumulated dose. Channel 1 of RadFET pair. Calculated from DELTA_VOLTS, with an equation configured by radiation physicists |
| $(USER_P)1:RAW_STATUS | $(P):$(SENSOR)1:RAW_STATUS | Sensor status. Channel 1 of RadFET pair. |
| $(USER_P)2:RAW | $(P):$(SENSOR)2:RAW | Raw voltage readback. Channel 2 of RadFET pair. |
| $(USER_P)2:ZERO_VOLTS | $(P):$(SENSOR)2:ZERO_VOLTS | Raw voltage at 0 accumulated dose. Channel 2 of RadFET pair. |
| $(USER_P)2:DELTA_VOLTS | $(P):$(SENSOR)2:DELTA_VOLTS | Raw voltage difference, from 0 to now. Channel 2 of RadFET pair. |
| $(USER_P)2:DOSE | $(P):$(SENSOR)2:DOSE | Accumulated dose. Channel 2 of RadFET pair. |
| $(USER_P)2:RAW_STATUS | $(P):$(SENSOR)2:RAW_STATUS | Sensor status. Channel 2 of RadFET pair. |
| $(USER_P)TEMP | $(P):[A,B,C,D]TEMP | Temperature of the sensor board. |
| $(P):VERSION | DOSFET controller version | |
| $(P):ID | DOSFET serial number | |
| $(P):GET_DELAY | Readback of pause between applying current and reading voltage | |
| $(P):SET_DELAY | Set pause time between applying current and reading voltage | |
| $(P):GET_BIAS | Readback bias voltage used between dose readings | |
| $(P):SET_BIAS | Set bias voltage used between dose readings | |
| $(P):SAVE_SETTINGS | Save delay and bias settings in the chassis non-volatile storage. | |
| $(P):SET_PERIOD | Dose readback sampling interval setting | |
| $(P):BOARD_TEMP | DOSFET chassis main board temperature | |
| $(P):POLL_ENABLE | Enable/disable dose readback polling. | |
| $(P):POLL_DELAY | Dose readback sampling interval readback | |
| $(P):GATE_POLLING | Counter for seconds since the last dose readback cycle | |
| $(P):[A,B,C,D]_READ | Trigger readback for a channel | |
| $(P):[A,B,C,D][1,2]:SET_ZERO_VOLTS | Expert screen, define latest voltage readback as 0 dose | |
| $(P):[A,B,C,D][1,2]:ZERO_TOD | Date/time string when dose was zeroed |
