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The hard x-ray side uses DOSFET controllers for undulator dosimeters, so the area will be UNDH:. The soft x-ray side will use the Keithley RadFET system, so the area for those will be UNDS:. Some sensors and one DOSFET box will be in the dump area.

PVs that apply to one RadFET sensor module

In this table, the "PV Name" column defines the user/programming interface with DEV defined by sensor location, e.g. DEV=RADM:GUNB:621: for a sensor at location 621 in GUNB. Each sensor board has two radiation dose sensors and one temperature sensor on it, so the radiation dose readings have an instance 1: and an instance 2:.

PV NameType

Description

$(DEV):$(INST):RAW

ai

Raw voltage readback.

$(DEV):$(INST):ZERO_VOLTSaiRaw voltage at corresponding to 0 accumulated dose.
$(DEV):$(INST):DELTA_VOLTSaiRaw voltage difference, from 0 to now.
$(DEV):$(INST):DOSEcalc

Accumulated dose.

Calculated from DELTA_VOLTS, with an equation in the CALC field configured by radiation physicists

$(DEV):$(INST):RAW_STATUSmbbiSensor status. ("Ok", "Over Linear Range", "Error")
$(DEV):TEMPai Temperature of the sensor board, C.
$(DEV):$(INST):SET_ZERO_VOLTSboExpert screen, define latest voltage readback as 0 dose
$(DEV):$(INST):ZERO_TODstringinDate/time string when dose was zeroed, i.e. latest voltage readback defined as ZERO_VOLTS

PVs that apply to the whole DOSFET chassis

In this table, DEV is a chassis name. One DOSFET chassis has four of the sensor modules defined above.

PV NameType

Description

$(DEV):VERSIONstringinDOSFET controller version
$(DEV):IDstringinDOSFET serial number
$(DEV):GET_DELAYai

Readback of pause between applying readback current and reading voltage

$(DEV):SET_DELAYaoSet pause time between applying readback current and reading voltage
$(DEV):GET_BIASaiReadback bias voltage used between dose readings
$(DEV):SET_BIASaoSet bias voltage used between dose readings
$(DEV):SAVE_SETTINGSboSave delay and bias settings in the chassis non-volatile storage.
$(DEV):SET_PERIODaoDose readback sampling interval setting
$(DEV):BOARD_TEMPaiDOSFET chassis main board temperature
$(DEV):POLL_ENABLEboEnable/disable dose readback polling.
$(DEV):POLL_DELAYaoDose readback sampling interval readback
$(DEV):GATE_POLLINGaiCounter for seconds since the last dose readback cycle

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DOSFET controller

location

Network host nameMAC address

Controller

connection

Sensor

undulator #

Sensor

apx. z-location

PV "Location"

field

HXU14radm-undh-rm0100:80:A3:9B:A9:34


AHXU13117021377
BHXU14117161477
CHXU15117281577
DHXU16117421677
HXU18radm-undh-rm0200:80:A3:A1:81:05



AHXU17117551777
BHXU18117681877
CHXU19117811977
DHXU20117952077
HXU22radm-undh-rm0300:80:A3:9B:A9:1FAHXU21Self Seeding118082177
BHXU22118202277
CHXU23118332377
DHXU24118462477
HXU26radm-undh-rm04

00:80:A3:A1:81:11

AHXU25118602577
BHXU26118732677
CHXU27118872777
DHXU28Self Seeding119002877
HXU30radm-undh-rm05

00:80:A3:A1:81:1B


AHXU29119132977
BHXU30119323077
CHXU31119323177
DHXU32119323277
HXU34radm-undh-rm06

00:80:A3:A1:81:OE

AHXU33119323377
BHXU34119323477
CHXU35119523577
DHXU36119653677
HXU38radm-undh-rm07

00:80:A3:A1:81:17


AHXU37119783777
BHXU38119913877
CHXU39120053977
DHXU40120184077
HXU42radm-undh-rm08

00:80:A3:9B:A9:10

AHXU41120314177
BHXU42120444277
CHXU43120584377
DHXU44120714477
HXU46radm-undh-rm09

00:80:A3:9B:A9:26

AHXU45120844577
BHXU46120974677

...

In this table, the "PV Name" column defines the user/programming interface with DEV defined by sensor location, e.g. DEV=RADM:GUNB:621: for a sensor at location 621 in GUNB, and "Wrapped internal name" is the names used internally, for which "PV Name" is a wrapper , but (not exposed on screens) which reflect the chassis channel labeling and manufacturer's documentation, e.g. P=RADM:GUNB:201: and SENSOR=B for channel B of the chassis at location 201 in GUNB. 

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