These are radiation monitoring devices, so the Device Type is RADM:.
The soft hard x-ray side uses DOSFET controllers for undulator dosimeters, so the area will be UNDSUNDH:. The hard soft x-ray side will use the Keithley RadFET system, so the area for those will be UNDHUNDS:. Some sensors and one DOSFET box will be in the dump area.
In this table, the "PV Name" column defines the user/programming interface with USER_P DEV defined by sensor location, e.g. USER_PDEV=RADM:GUNB:621: for a sensor at location 621 in GUNB, and Aliased internal name is the names used internally but not exposed on screens which reflect the chassis channel labeling and manufacturer's documentation, e.g. P=RADM:GUNB:201: and SENSOR=B for channel B of the chassis at location 201 in GUNB. Each sensor board has two sensors on it, so the readings have an instance 1: and an instance 2:.
PV Name | Aliased internal nameType | Description |
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$(USER_PDEV):1:RAW$(P):$(SENSOR)1:RAW | | Raw voltage readback. Channel 1 of RadFET pair. |
$(USER_PDEV):1:ZERO_VOLTS$(P):$(SENSOR)1:ZERO_VOLTS | | Raw voltage at 0 accumulated dose. Channel 1 of RadFET pair. |
$(USER_PDEV):1:DELTA_VOLTS$(P):$(SENSOR)1:DELTA_VOLTS | | Raw voltage difference, from 0 to now. Channel 1 of RadFET pair. |
$(USER_PDEV):1:DOSE$(P):$(SENSOR)1:DOSE | | Accumulated dose. Channel 1 of RadFET pair. Calculated from DELTA_VOLTS, with an equation in the CALC field configured by radiation physicists |
$(USER_PDEV):1:RAW_STATUS$(P):$(SENSOR)1:RAW_STATUS | | Sensor status. Channel 1 of RadFET pair. |
$(USER_PDEV):2:RAW$(P):$(SENSOR)2:RAW | | Raw voltage readback. Channel 2 of RadFET pair. |
$(USER_PDEV):2:ZERO_VOLTS$(P):$(SENSOR)2:ZERO_VOLTS | | Raw voltage at 0 accumulated dose. Channel 2 of RadFET pair. |
$(USER_PDEV):2:DELTA_VOLTS$(P):$(SENSOR)2:DELTA_VOLTS | | Raw voltage difference, from 0 to now. Channel 2 of RadFET pair. |
$(USER_PDEV):2:DOSE$(P):$(SENSOR)2:DOSE | | Accumulated dose. Channel 2 of RadFET pair. |
$(USER_PDEV):2:RAW_STATUS$(P):$(SENSOR)2:RAW_STATUS | | Sensor status. Channel 2 of RadFET pair. |
$(DEV):TEMP | | Temperature of the sensor board. |
$(USER_P)TEMPP):[A,B,C,D]_READ | | Trigger readback for a channel |
$(P):[A,B,C,D][1,2]:SET_ZERO_VOLTS | | Expert screen, define latest voltage readback as 0 dose |
$(P):[A,B,C,D]TEMP | Temperature of the sensor board. | ][1,2]:ZERO_TOD | | Date/time string when dose was zeroed |
PVs that apply to the whole DOSFET chassis
In this table, DEV is a chassis name
PV Name | Type | Description |
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$(DEV$(P):VERSION | | DOSFET controller version |
$(PDEV):ID | | DOSFET serial number |
$(PDEV):GET_DELAY | | Readback of pause between applying current and reading voltage |
$(PDEV):SET_DELAY | | Set pause time between applying current and reading voltage |
$(PDEV):GET_BIAS | | Readback bias voltage used between dose readings |
$(PDEV):SET_BIAS | | Set bias voltage used between dose readings |
$(PDEV):SAVE_SETTINGS | | Save delay and bias settings in the chassis non-volatile storage. |
$(PDEV):SET_PERIOD | | Dose readback sampling interval setting |
$(PDEV):BOARD_TEMP | | DOSFET chassis main board temperature |
$(PDEV):POLL_ENABLE | | Enable/disable dose readback polling. |
$(PDEV):POLL_DELAY | | Dose readback sampling interval readback |
$(PDEV):GATE_POLLING | | Counter for seconds since the last dose readback cycle |
DOSFET locations and sensor to chassis mapping
DOSFET controller location | Network host name | Sensor undulator # | Sensor z-location | Controller connection |
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| | | | |
Internal name mapping for maintenance reference, NOT PART OF THE NAMING CONVENTION
In this table, the "PV Name" column defines the user/programming interface with DEV defined by sensor location, e.g. DEV=RADM:GUNB:621: for a sensor at location 621 in GUNB, and "Wrapped internal name" is the names used internally, for which "PV Name" is a wrapper, but not exposed on screens which reflect the chassis channel labeling and manufacturer's documentation, e.g. P=RADM:GUNB:201: and SENSOR=B for channel B of the chassis at location 201 in GUNB.
PV Name | Wrapped internal name | Description |
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$(DEV):1:RAW | $(P):$(SENSOR)1:RAW | Raw voltage readback. Channel 1 of RadFET pair. |
$(DEV):[A,B,C,D]_READ | | Trigger readback for a channel |
$(P):[A,B,C,D][1,2]:SET_ZERO_VOLTS | | Expert screen, define latest voltage readback as 0 dose |
:1:ZERO_VOLTS | $(P):$(SENSOR)1:ZERO_VOLTS | Raw voltage at 0 accumulated dose. Channel 1 of RadFET pair. |
$(DEV):1:DELTA_VOLTS | $(P):$(SENSOR)1:DELTA_VOLTS | Raw voltage difference, from 0 to now. Channel 1 of RadFET pair. |
$(DEV):1:DOSE | $(P):$(SENSOR)1:DOSE | Accumulated dose. Channel 1 of RadFET pair. Calculated from DELTA_VOLTS, with an equation configured by radiation physicists |
$(DEV):1:RAW_STATUS | $(P):$(SENSOR)1:RAW_STATUS | Sensor status. Channel 1 of RadFET pair. |
$(DEV):2:RAW | $(P):$(SENSOR)2:RAW | Raw voltage readback. Channel 2 of RadFET pair. |
$(DEV):2:ZERO_VOLTS | $(P):$(SENSOR)2:ZERO_VOLTS | Raw voltage at 0 accumulated dose. Channel 2 of RadFET pair. |
$(DEV):2:DELTA_VOLTS | $(P):$(SENSOR)2:DELTA_VOLTS | Raw voltage difference, from 0 to now. Channel 2 of RadFET pair. |
$(DEV):2:DOSE | $(P):$(SENSOR)2:DOSE | Accumulated dose. Channel 2 of RadFET pair. |
$(DEV):2:RAW_STATUS | $(P):$(SENSOR)2:RAW_STATUS | Sensor status. Channel 2 of RadFET pair. |
$(DEV):TEMP | $(P):$(P):[A,B,C,D][1,2]:ZERO_TOD | | Date/time string when dose was zeroedTEMP | Temperature of the sensor board. |