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These are radiation monitoring devices, so the Device Type is RADM:.

The soft hard x-ray side uses DOSFET controllers for undulator dosimeters, so the area will be UNDSUNDH:. The hard soft x-ray side will use the Keithley RadFET system, so the area for those will be UNDHUNDS:. Some sensors and one DOSFET box will be in the dump area.

In this table, the "PV Name" column defines the user/programming interface with USER_P DEV defined by sensor location, e.g. USER_PDEV=RADM:GUNB:621: for a sensor at location 621 in GUNB, and Aliased internal name is the names used internally but not exposed on screens which reflect the chassis channel labeling and manufacturer's documentation, e.g. P=RADM:GUNB:201: and SENSOR=B for channel B of the chassis at location 201 in GUNB. Each sensor board has two sensors on it, so the readings have an instance 1: and an instance 2:.

PV NameAliased internal nameType

Description

$(USER_PDEV):1:RAW$(P):$(SENSOR)1:RAW 

Raw voltage readback. Channel 1 of RadFET pair.

$(USER_PDEV):1:ZERO_VOLTS$(P):$(SENSOR)1:ZERO_VOLTS Raw voltage at 0 accumulated dose. Channel 1 of RadFET pair.
$(USER_PDEV):1:DELTA_VOLTS$(P):$(SENSOR)1:DELTA_VOLTS Raw voltage difference, from 0 to now. Channel 1 of RadFET pair.
$(USER_PDEV):1:DOSE$(P):$(SENSOR)1:DOSE 

Accumulated dose. Channel 1 of RadFET pair.

Calculated from DELTA_VOLTS, with an equation in the CALC field configured by radiation physicists

$(USER_PDEV):1:RAW_STATUS$(P):$(SENSOR)1:RAW_STATUS Sensor status. Channel 1 of RadFET pair.
$(USER_PDEV):2:RAW$(P):$(SENSOR)2:RAW Raw voltage readback. Channel 2 of RadFET pair.
$(USER_PDEV):2:ZERO_VOLTS$(P):$(SENSOR)2:ZERO_VOLTS Raw voltage at 0 accumulated dose. Channel 2 of RadFET pair.
$(USER_PDEV):2:DELTA_VOLTS$(P):$(SENSOR)2:DELTA_VOLTS Raw voltage difference, from 0 to now. Channel 2 of RadFET pair.
$(USER_PDEV):2:DOSE$(P):$(SENSOR)2:DOSE Accumulated dose. Channel 2 of RadFET pair.
$(USER_PDEV):2:RAW_STATUS$(P):$(SENSOR)2:RAW_STATUS Sensor status. Channel 2 of RadFET pair.
$(DEV):TEMP  Temperature of the sensor board.
$(USER_P)TEMPP):[A,B,C,D]_READ Trigger readback for a channel
$(P):[A,B,C,D][1,2]:SET_ZERO_VOLTS Expert screen, define latest voltage readback as 0 dose
 $(P):[A,B,C,D]TEMP Temperature of the sensor board.][1,2]:ZERO_TOD Date/time string when dose was zeroed

PVs that apply to the whole DOSFET chassis

In this table, DEV is a chassis name

PV NameType

Description

$(DEV$(P):VERSION DOSFET controller version
$(PDEV):ID DOSFET serial number
$(PDEV):GET_DELAY 

Readback of pause between applying current and reading voltage

$(PDEV):SET_DELAY Set pause time between applying current and reading voltage
$(PDEV):GET_BIAS Readback bias voltage used between dose readings
$(PDEV):SET_BIAS Set bias voltage used between dose readings
$(PDEV):SAVE_SETTINGS Save delay and bias settings in the chassis non-volatile storage.
$(PDEV):SET_PERIOD Dose readback sampling interval setting
$(PDEV):BOARD_TEMP DOSFET chassis main board temperature
$(PDEV):POLL_ENABLE Enable/disable dose readback polling.
$(PDEV):POLL_DELAY Dose readback sampling interval readback
$(PDEV):GATE_POLLING Counter for seconds since the last dose readback cycle

 

DOSFET locations and sensor to chassis mapping

DOSFET controller locationNetwork host nameSensor undulator #Sensor z-locationController connection
     

 

Internal name mapping for maintenance reference, NOT PART OF THE NAMING CONVENTION

In this table, the "PV Name" column defines the user/programming interface with DEV defined by sensor location, e.g. DEV=RADM:GUNB:621: for a sensor at location 621 in GUNB, and "Wrapped internal name" is the names used internally, for which "PV Name" is a wrapper, but not exposed on screens which reflect the chassis channel labeling and manufacturer's documentation, e.g. P=RADM:GUNB:201: and SENSOR=B for channel B of the chassis at location 201 in GUNB. 

Date/time string when dose was zeroed
PV NameWrapped internal name

Description

$(DEV):1:RAW$(P):$(SENSOR)1:RAW

Raw voltage readback. Channel 1 of RadFET pair.

$(DEV):[A,B,C,D]_READ Trigger readback for a channel
$(P):[A,B,C,D][1,2]:SET_ZERO_VOLTS Expert screen, define latest voltage readback as 0 dose
:1:ZERO_VOLTS$(P):$(SENSOR)1:ZERO_VOLTSRaw voltage at 0 accumulated dose. Channel 1 of RadFET pair.
$(DEV):1:DELTA_VOLTS$(P):$(SENSOR)1:DELTA_VOLTSRaw voltage difference, from 0 to now. Channel 1 of RadFET pair.
$(DEV):1:DOSE$(P):$(SENSOR)1:DOSE

Accumulated dose. Channel 1 of RadFET pair.

Calculated from DELTA_VOLTS, with an equation configured by radiation physicists

$(DEV):1:RAW_STATUS$(P):$(SENSOR)1:RAW_STATUSSensor status. Channel 1 of RadFET pair.
$(DEV):2:RAW$(P):$(SENSOR)2:RAWRaw voltage readback. Channel 2 of RadFET pair.
$(DEV):2:ZERO_VOLTS$(P):$(SENSOR)2:ZERO_VOLTSRaw voltage at 0 accumulated dose. Channel 2 of RadFET pair.
$(DEV):2:DELTA_VOLTS$(P):$(SENSOR)2:DELTA_VOLTSRaw voltage difference, from 0 to now. Channel 2 of RadFET pair.
$(DEV):2:DOSE$(P):$(SENSOR)2:DOSEAccumulated dose. Channel 2 of RadFET pair.
$(DEV):2:RAW_STATUS$(P):$(SENSOR)2:RAW_STATUSSensor status. Channel 2 of RadFET pair.
$(DEV):TEMP$(P):$(P):[A,B,C,D][1,2]:ZERO_TOD TEMP Temperature of the sensor board.