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1. irradiate bare sensors and bump-bond afterwards. The problem is to deal with activated sensors (and surrounding equipment) and to do the bump-bonding while keeping the sensor cool 
2. the second solution would be to irradiate assemblies and shield the FE-I3 chip from the proton beam. Cinzia and Steve have proposed a shielding idea. There
   are several issues to be worked out: how to build a fast removal setup of the sensor assembly from the shielding that could be significantly activated, how to increase the bias during the irradiation, how to measure the dose, how to align the beam wrt to the assemblies and shielding. It was suggested that SLAC would design and build the shielding. Simulation is required.  This solution was not pursued...!
3. Cold bump bonding: irradiate the sensor and cold bump bond the sensor to the FE-I3 chip afterwards. See point 1.
4. Use a staggered bonding
5. Use a PCB between sensor and FE-I3.

The second solution would be the default plan, but we should think of better alternatives.

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Initial idea: shielding the sensor:

here is a drawing of principle for shielding the FE-I3 chips under proton irradiation:
 

Cold Bump Bonding:

here the sensor would be irradiated and then would be bump bonded to the FE-I3 chip, with cold bump bonds.

Use a staggered bonding:

see Philippe's presentation at the February 2008 3D Meeting: Proton_Feb2009

Use of a PCB between sensor and chip:

here the idea is not put a PCB between the sensor and the chip, which would allow to shield the chip. It requires two bump bondings: sensor+PCB and PCB+chip. See Chris's presentation here: Radiation test with PCB

Design of a cool box for testing the sensors

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 Proton irradiation can be performed at the Los Alamos National Laboratory:

 http://www.lansce.lanl.gov/^{Image Removed}

 The deadline for submitting proposal for beam time is end of February. Information on how to submit proposals can be found here:

 https://wnr-proposals.lanl.gov/index.shtml^{Image Removed}