Neutron irradiation (bare sensors + assemblies) shall be performed at Prague. Proton irradiation shall be performed at Los Alamos. Sensors should put under radiation up to 1x10^16 p/cm2.
Protons irradiation is trickier than neutron irradiation because the electronics is highly sensitive to proton radiation. FE-I3 chips have been designed to hold up to 1x10^15. It is therefore a problem if one wants to irradiate the assembly (3D + FE-I3) to higher levels. Another ingredient is that sensors should be irradiated under bias and cooled
(between -10 and -40 C).
Several solutions have been discussed:
we have been allocated beamtime at LANSCE during the intervals:
Aug 4 (8am) - Aug 6 (7am)
Dec 1 (8am) - Dec 3 (7am)
We will irradiate sensots in August, in order to test the irradiated sensors during the October TestBeam.
here the idea is not put a PCB between the sensor and the chip, which would allow to shield the chip. It requires two bump bondings: sensor+PCB and PCB+chip. See Chris's presentation here: Radiation test with PCB
A drawing of the irradiation set-up can be found here: Proton_Irradiation
Proton irradiation can be performed at the Los Alamos National Laboratory:
The deadline for submitting proposal for beam time is end of February. Information on how to submit proposals can be found here:
https://wnr-proposals.lanl.gov/index.shtml