Versions Compared

Key

  • This line was added.
  • This line was removed.
  • Formatting was changed.

...

Again, we should keep in mind that we will test two new sensors. For example, the depletion voltage for these new sensors is not precisely known. All quantities (in particular the overall efficiency) should be measured as a function of the Bias Voltage, B field and Beam incident angle: * Bias voltage: we propose 8 values. For the Stanford reference sensor(with depletion voltage around 10V): 2,5,10,15,20,30,40,60 V. For the two new sensors, as the depletion voltage is not precisely known, we can either the same scan or do a binary scan in order to get more points around the knee (low bias, then high bias, then in the middle, then depending how the efficiency varies, more point in the first or in the second bin). *** B field: the minimum is two steps: 0T and 1.9 T (maximum dipole filed, ATLAS being 2T). If time permits, it would be useful to take one or two steps.*** beam incident angle: