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A drawing of the irradiation set-up can be found here: Proton_Irradiation
Simulation of the proposed LANL setup (by Heinz Vincke):
We assumed a 800MeV circular proton beam with uniform distribution (r=1cm)
General layout:
PCB layout:
All particle fluence per incident proton:
1MeV n eq per incident proton:
Neutron fluence per incident proton (I):
Neutron fluence per incident proton (II):
Neutron fluence per incident proton (II):
Shielding the sensor:
This was the initial idea, which was abandonned.
here is a drawing of principle for shielding the FE-I3 chips under proton irradiation:
Cold Bump Bonding:
here the sensor would be irradiated and then would be bump bonded to the FE-I3 chip, with cold bump bonds.
Use a staggered bonding:
see Philippe's presentation at the February 2008 3D Meeting: Proton_Feb2009
Design of a cool box for testing the sensors
Los Alamos irradiation facility
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