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A drawing of the irradiation set-up can be found here: Proton_Irradiation

Simulation of the proposed LANL setup (by Heinz Vincke):

We assumed a 800MeV circular proton beam with uniform distribution (r=1cm)

  • General layout: Image Removed

  • PCB layout: Image Removed

  • All particle fluence per incident proton:

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  • 1MeV n eq per incident proton:

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  • Neutron fluence per incident proton (I):

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  • Neutron fluence per incident proton (II):

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  • Neutron fluence per incident proton (II):

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Shielding the sensor:

This was the initial idea, which was abandonned.

here is a drawing of principle for shielding the FE-I3 chips under proton irradiation:
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Cold Bump Bonding:

here the sensor would be irradiated and then would be bump bonded to the FE-I3 chip, with cold bump bonds.

Use a staggered bonding:

see Philippe's presentation at the February 2008 3D Meeting: Proton_Feb2009

Design of a cool box for testing the sensors

Los Alamos irradiation facility

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